Assoc. Prof. Xiaoming Zhang
Hebei University of Technology
Reaeach area ：
1）Topological electronic material；
2）New electronic functional materials；
3）Two dimensional materials and properties；
4）Other new materials and properties
Physical properties and material realization of several magnetic topological electronic materials
Topological electronic materials have become the research focus in condensed matter physics and materials science. Tracing their origins, it can be attributed to the first proposal of quantum spin Hall state (two-dimensional topological insulators) in 2005, realized in graphene. Its particularity lies in that, it enables the realization of spin-resolved edge states on its boundaries. Then in HgTe/CdTe quantum wells, the development of two-dimensional topological insulators has gradually matured. Topological insulators are not limited to two-dimensional, and three-dimensional topological insulators and corresponding metallic surface states have also been extensively studied. In recent years, topological materials have been extended from insulators to semi-metals and metals, showing more abundant physical properties and application prospects.
To realize their physical properties and future applications of topological materials, it is particularly important to develop ideal candidate materials. In recent years, the rapporteur team has devoted itself to explore topological materials and develop their physical properties [1-10]. Their reaearch involves various types of topological materials, including topological nodal point (semi-) metal, topological nodal line (semi-) metal, topological nodal suface (semi) metal, etc. In addition, magnetism can release the freedom of spin. Magnetic topological materials integrate spin polarization and non-trivial topological electronic states; thus undoubtedly have broad application prospects in future spintronics devices. This report will introduce the physical properties and material development of various magnetic topological states.